| ‘? _ vs-8ETUo4PbI=, VS-8ETU04-N37 www'V'Shay'C°m Vishay Semiconductors DYNAMIC REcovERY cHARAcTE Tlcs rrJ = 25 0C unless otherwise specified)E1KM 2% MA EMM KM 2 TEST coNDITIoNS PARAMETER Reverse recovew time B IF :1_[) A, dIF/dt : 50 A/uA, VR : 30 V Peak recovery current Reverse recovew charge THERMAL - MECHANICAL SPECIFICATIONSEEI TEST c°ND'T'°NSE1E We junction to case junction to ambientThermal resistance, Mounting surface, flat, smoothTypical socket mount 2 VR:200Vd|F/dt : 200 A/Us ' Mounting torque Marking device Revision: 26-Jun-12 2 Document Number: 94030 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEUrope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT To SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.oom/doo?91o00 |